Sviluppi attuali di sensori al silicio in CSN 5 V. Bonvicini Riunione CNTT e X incontro con I referenti locali LNS – Catania, 15-16 aprile 2014

V. Bonvicini - CNTT & RL - LNS Contents Rivelatori al silicio per HEP: 3D-SOD UFSD Rivelatori al silicio per raggi X (ALS, spazio…): PixFEL REDSOX “Esotici” SQUOP GBTD 4/16/2014 V. Bonvicini - CNTT & RL - LNS

R&D on silicon sensors for HEP - 1 3D-SOD (L. Servoli) 4/16/2014 V. Bonvicini - CNTT & RL - LNS

R&D on silicon sensors for HEP - 1 4/16/2014 V. Bonvicini - CNTT & RL - LNS

R&D on silicon sensors for HEP - 1 4/16/2014 V. Bonvicini - CNTT & RL - LNS

R&D on silicon sensors for HEP - 1 Opzione 2: MAPS on Diamond 4/16/2014 V. Bonvicini - CNTT & RL - LNS

R&D on silicon sensors for HEP - 2 UFSD (Ultra Fast Silicon Detectors, N. Cartiglia) 4/16/2014 V. Bonvicini - CNTT & RL - LNS

R&D on silicon sensors for HEP - 2 4/16/2014 V. Bonvicini - CNTT & RL - LNS

R&D on silicon sensors for HEP - 2 4/16/2014 V. Bonvicini - CNTT & RL - LNS

R&D on silicon sensors for HEP - 2 4/16/2014 V. Bonvicini - CNTT & RL - LNS

R&D on silicon sensors for X-rays - 1 PixFEL (L. Ratti) PixFEL Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at FELs 4/16/2014 V. Bonvicini - CNTT & RL - LNS

R&D on silicon sensors for X-rays - 1 Goal of the project: investigating the technologies, designing the fundamental microelectronic building blocks and exploring the readout architectures for high performance X-ray imaging instrumentation to be be used in the experiments at the next generation free electron laser facilities active edge pixel sensors, low density TSVs 65 nm CMOS technology for front-end and readout electronics in pixel data storage and readout architectures Duration: 3 years Participating INFN groups INFN Pavia INFN Pisa INFN Trento (gruppo collegato) 4/16/2014 V. Bonvicini - CNTT & RL - LNS

R&D on silicon sensors for X-rays - 1 Develop a four-side buttable module for the assembly of large area detectors with no or minimum dead area to be used at FEL experiments Good efficiency up to 10 keV 9 bit resolution (effective), 5 MHz sample rate wide dynamic range (1 to 10000 photons), single photon sensitivity burst and continuous mode operation 4/16/2014 V. Bonvicini - CNTT & RL - LNS 1 kframe

R&D on silicon sensors for X-rays - 2 REDSOX (A. Vacchi) Linea di ricerca: development of large area SDDs and low noise front-end electronics for X-ray spectroscopy and imaging Participants: TS, BO (IASF-BO), ROMA2 (IAPS- ROMA), MI (Politecnico), PV (UniPV) Collaborations: FBK (Trento), Sincrotrone Trieste Project timeline: 2013-2014 4/16/2014 V. Bonvicini - CNTT & RL - LNS

R&D on silicon sensors for X-rays - 2 4/16/2014 V. Bonvicini - CNTT & RL - LNS

R&D on silicon sensors for X-rays - 2 SDD for experiments at ALS First approach: a pixel SDD optmized for fluorescent spectroscopy using synchrotron radiation light (experiment TwinMic@Elettra) 20 square cells (9.5 mm2) + 8 triangle cells (4.75 mm2) 4/16/2014 V. Bonvicini - CNTT & RL - LNS

R&D on silicon sensors for X-rays - 2 PMC-ULNpre3 ASIC coupled to TS-FBK E10 SDD - 40°C Courtesy of G. Bertuccio 4/16/2014 V. Bonvicini - CNTT & RL - LNS

More exotic sensor R&D - 1 SQUOP (Silicon photomultipliers for QUantum OPtics, E. Vallazza) Studio dell’applicazione dei SiPM alla caratterizzazione di stati ottici quantistici 4/16/2014 V. Bonvicini - CNTT & RL - LNS

More exotic sensor R&D - 1 Sviluppo di detector con photon resolving capability in un regime da pochi fotoni a qualche centinaio di fotoni (regime mesoscopico) Scopo → preparazione e caratterizzazione di stati fotonici non classici per applicazioni in quantum optics, dalla generazione di sorgenti di fotoni entangled al quantum computing Sezioni partecipanti → Trieste (responsabile nazionale Erik Vallazza), MiB Al gruppo di MiB parteciperanno esperti di quantum optics che verranno associati dopo l'eventuale approvazione del progetto da parte della CNS5 → catena per studio da quantum optics disponibile presso Insubria - Como 4/16/2014 V. Bonvicini - CNTT & RL - LNS

More exotic sensor R&D - 2 GBTD (Graphene-Based Thermal Detectors, P. Falferi) 4/16/2014 V. Bonvicini - CNTT & RL - LNS

More exotic sensor R&D - 2 General Properties of Graphene Electron transport High electron mobility at room temperature (200,000 cm2·V−1·s−1, achieved = predicted) limited by scattering by the acoustic phonons Resistivity = 10−6 Ω·cm (less than the resistivity of silver) Optical phonons of the substrate (ex. SiO2 ) limits the mobility to 40,000 cm2·V−1·s−1. Also dopant and ripples increase the resistivity Optical Electrons behave as massless two-dimensional particles => wavelength-independent absorption (=2.3%) for normal incident light below ~ 3 eV (very high opacity for an atomic monolayer) Mechanical Young modulus of 1TPa (steel 200GPa) and intrinsic strength of 130GPa (very close to theory) (carbon fiber 4GPa) Thermal Record high thermal conductivity and can sustain extremely high densities of electric current (million times higher than copper) 4/16/2014 V. Bonvicini - CNTT & RL - LNS

More exotic sensor R&D - 2 4/16/2014 V. Bonvicini - CNTT & RL - LNS

More exotic sensor R&D - 2 Attività: Grafene da FBK o da partner della Graphene Flagship o acquistando da produttori (Pbm: purezza, dimensione cristalli, substrato, …) Caratterizzazione grafene in FBK (XPS, Raman…) Microfabbricazione su grafene in FBK (pbm: contatti, pulizia…) Verifica proprietà grafene a T ultracriogeniche (es. Ge-ph vs T) Misure ultracriogeniche di rumore termico da resistenza in grafene (lettura SQUID) Misure ultracriogeniche di rumore termico in risonanza con HEMT e poi con MSA (Microstrip SQUID Amplifier) Studio di possibili implementazioni di frequency multiplexing Studio di strategie tecnologiche per aumentare la quantum efficiency (es. più strati o uso cavità ottica (linea di ricerca dell’ IFN-CNR di Trento)) Possibili applicazioni su detector tipo DBD (E. Previtali) 4/16/2014 V. Bonvicini - CNTT & RL - LNS