Presentazione sul tema: "CVD Diamond based Active Devices"— Transcript della presentazione:
1 CVD Diamond based Active Devices Paolo CalvaniS2DELDiaC2Lab(Diamond & Carbon Compounds Lab)IMIP - CNR - Montelibretti (RM)S2DELSolid State and Diamond Electronics LabUniversità degli Studi “Roma Tre”
2 Daniele M. TrucchiPaolo CalvaniAlessandro BellucciEmilia CappelliStefano Orlando
3 CNR-IMIP: Know-How & Projects Study of Nucleation and Growth Mechanisms of CVD DiamondCVD Diamond protective coatings of cutting toolsCoordination of MURST-CNR 5% ProjectDevelopment of high-tech materials and ceramic coatingsENEA-MIUR “PROMOMAT” Strategic ProjectSecondary electron emission amplifiers for scanning electron microscopyMADESS II Applied Research ProjectVUV & DUV Radiation Detectors in collaboration with S2DEL – Univ. Roma TreASI ARS1/R07/01 Aerospace ProjectPoly-Diamond Radiation Dosimeters for Radiation TherapyCoordination of European Project “DIAMOND” G5RD-CTNanostructured Carbon and graphene Structures for Opto-Electronic applicationsFIRB Project “Micro & Nanocarbon” & FISR Project “High Density Memories”Systems for direct nuclear-to-electric energy conversionCoordination of CNR-RSTL “ECO-Diamond” Project2008-today Development of Single-Crystal Diamond dosimeters in collaborationwith S2DEL - Univ. Roma TreThermionic-thermoelectric conversion module for solar concentrated systemsE2PHEST2US ProjectMechanical ApplicationsElectronic Applications
4 Secondary Electron Emission Characterization Setup CNR-IMIP: FacilitiesMaterial ProductionCharacterization of Chemical-Physical PropertiesTechnological Processes for Device FabricationCharacterization of Device Performance~Vacuum & Temperature Electronic Characterization (VTEC) (10-9 Torr, T= K) for Thermionic EmissionSecondary Electron Emission Characterization SetupSpectroscopyRaman & IRHot FilamentCVD for diamond film depositionMW-CVD for surface hydrogen terminationSpectral (UV-Vis-NIR) Photoconductivity SetupX-Ray Photoconductivity SetupMicrowave CVD for diamond (doped) film depositionRF Sputtering for deposition of metals Ti, Al, Cr, …Spectral PhotometryMicroscopySEM & EDSFour-Point Probe under vacuum,T= °CPulsed laser (Excimer & Nd:YAG) ablation for (nanostructured) thin-film deposition of carbon, carbides, refractory metalsAFMSeebeck Effect Measurement System for Thermoelectric Characterization
5 Diamond Electronic Properties MaterialBand gapThermal conductivityBreakdown electric field EbMobilityCarriers sat. velocity vsatDielectric constant εreVW/cmK106 V/cmcm2/Vs107 cm/s-Diamond5.52010h1.05.7Gallium nitride220.127.116.110008.9Silicon carbide3.274.93.010002.09.7Gallium Arsenide1.420.550.485001.2912.9Silicon1.120.3140011.8Germanium0.670.580.1390016.2High Frequency – High Power Field Effect TransistorsUV Power SwitchesRenewable Energies Conversion Stages
6 High Frequency – High Power Field Effect Transistors S2DELPlasma assisted Hydrogen termination of CVD Diamond induces p-type conductive channelFabricated by S2DEL and IFN-CNREvolution of the band bending, activated by air exposure, during the electron transfer process at the interface between diamond and water layer[b]: density-of-states (DOS) is changing from 3D to 2D: 2DHG
7 Pout @ 1GHz ~ 0.8 W/mm[a] S2DEL Maximum VDS applied=80 V RF Power Characterization byPolitecnico di TorinoCLASS 2GHzPout=0.2 W/mmGain=8 dBPAE=21.3%1GHz ~ 0.8 W/mm[a]Best result for Polycrystalline DiamondS2DELLG=200nm, WG=50umVDS=-14 V, VGS=-0.3 VfMAX = 15.2 GHzft = 6.2 GHzMaximum VDS applied=80 VEapplied= 2 MV/cmChannel conductance is always positive.No self heating effects!
8 LG=0.2 μm VGS=-0.2 V, VDS=-10 V Eapplied= 0.5 MV/cm Polycrystalline DiamondPolyD4 by Russian Academy of SciencesSingle Crystal DiamondP7MS by Russian Academy of SciencesWg=50 μm-20 dB/dec.WG=25 μmGain = 15 1 GHzGain = 22 1 GHzfMAX = 23.7 GHzfMAX =26.3 GHzfT = 6.9 GHzfT = 13.2 GHzS2DELLG=0.2 μmVGS=-0.2 V, VDS=-10 VEapplied= 0.5 MV/cmRF Small Signal Characterization in collaboration with by Tor Vergata University
9 Polycrystalline Diamond PolyD4 by Russian Academy of Sciences S2DEL-20 dB/dec.Lg=0.2 μm, Wg=25 μmVGS=0.0 V, VDS=-35 VGain =16fMAX = 35 GHzfT = 10 GHzEapplied= 1.75 MV/cm
14 Renewable Energies Conversion Stage EU Project E2PHEST2US’Duration: 3 years (Jan Jan 2013)Total Project Cost: 2.68 M€Total EU Funding: 1.98 M€Partners:CNR (Italy, Scientific Coordination)CRR (Italy, Management Coordination)SHAP (Italy)Tel Aviv University (Israel)Tubitak (Turkey)Prysmian (Multinational Industry)Maya (San Marino)*For details,
15 EU Project E2PHEST2US’ T z Thermionic Stage Load Radiation Absorber CollectorThermoelectric Stage LoadRloadRloadpnUnderVacuumConcentrated Solar Radiation(400 – 1000 suns)pnpnThermionic EmitterInter-electrode Space (<1 mm)Development of:A radiation absorber made of ceramic materials able to work stably at high temperature ( °C)A thermionic conversion stage with CVD diamond as the active materialA thermoelectric conversion stage constituted by high Seebeck coefficient materialsMaximum theoretical efficiency ≈ 30%TzFinal Thermal StageTR ( °C)Thermoelectric StageTETC ( °C)TTETAmb*For details,
16 Thanks for the attention CVD Diamond based Active DevicesThanks for the attentionS2DELDiaC2Lab(Diamond & Carbon Compounds Lab)IMIP - CNR - Montelibretti (RM)S2DELSolid State and Diamond Electronics LabUniversità degli Studi “Roma Tre”
18 Alternative Technology in Concentrating Systems Multi-junction Photovoltaic CellsThermodynamic Conversion by Heat Engines (Stirling, Rankine)Nominal Conversion Efficiency of 30%CompactnessNo mechanical parts in movementHighly ExpensiveMandatory Need of Cooling (Conversion Efficiency Exponentially Decreases with Temperature)Illumination Local Inhomogeneities Causes Output BottlenecksProduction Dependent on Semiconductor Industry (Few Large-Scale World Suppliers)Nominal Conversion Efficiency of 35% at High Temperatures (> 600 °C)Not Compact SystemMechanical Parts in Movement (Degradation with Operative Time)Economically Reasonable for Large Plants (> 10 kWe)
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